INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS

This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Submitted: 2025-02-13; Published: 2025-02-13

This work is licensed under Creative Commons Attribution–NonCommercial International License (CC BY-NC 4.0).

Abstract

Electron capture process in GaAs/AlAs spherical quantum dot-quantum well structure is studied theoretically. The capture rate in two polar-optical-phononmediated capture processes has been calculated by taking into account the phonon confinement effect. Carrier capture is shown to proceed with rates as high as 1010 s–1 at temperature T>100 K. A short capture time is also achieved for low carrier density.