Multilayer Anisotropic Thin Film with a Twist
ISSN: 1829-1171
Submitted: 2026-07-17
Natural Sciences, Physics, 2026
Impurity States in Gated Graphene Bilayer in a Magnetic Field
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Submitted: 2026-07-21
© 2026 by author(s) and The Gufo Inc.
This work is licensed under Creative Commons Attribution–NonCommercial International License
(CC BY-NC 4.0).
Abstract
We develop a variational approach in momentum space for an impurity electron in bilayer graphene with an energy gap opened by perpendicular electric field. The binding energy of an impurity electron in gapped bilayer graphene is studied by this method and it is shown that the energy is monotonically increasing with the increase of the gap value. The dependence of the binding energy on the interlayer hopping parameter is also investigated. The method is extended for the investigation of impurity ground state energy in an external magnetic field.