Multilayer Anisotropic Thin Film with a Twist
ISSN: 1829-1171
Submitted: 2026-07-17
Natural Sciences, Physics, 2026
Impedance characteristics of p-Si /BaxSr1-xTiO3 heterojunction prepared by pulsed laser deposition method
This is an open access article distributed under the
Creative Commons Attribution License, which permits unrestricted use, distribution,
and reproduction in any medium, provided the original work is properly cited.
Submitted: 2026-07-21
© 2026 by author(s) and The Gufo Inc.
This work is licensed under Creative Commons Attribution–NonCommercial International License
(CC BY-NC 4.0).
Abstract
p Si Ba Sr TiO xx heterojunction properties are investigated by electrochemical impedance spectroscopy method for the first time. The general equivalent circuit model is proposed in circuit description code as: Cf , Rf , Ch,Rh,Rp, where Cf , Rf are the Ba Sr TiO xx 13 film conditioned capacitance and resistance, Ch, Rh are the heterojunction depletion layer capacitance and resistance, respectively, Rp is the series resistance. It is stated that the Bode plot curves of the structure in air mostly affected by the depletion layer capacitance of heterojunction () CVh .