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Conductometric sensor for hydrogen peroxide vapors detection

This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Submitted: 2026-07-23
CC BY-NC 4.0 This work is licensed under Creative Commons Attribution–NonCommercial International License (CC BY-NC 4.0).

Abstract

ZnO doped with 2 at.% La gas sensitive thin film was deposited on the Multi-SensorPlatforms by the rf magnetron sputtering method using ZnO doped with 2 at.% La ceramic target prepared by us. Palladium catalytic particles were deposited by ion beam sputtering method on the surface of the sensing layer. The sensitivity of semiconductor film to low concentration of hydrogen peroxide vapors was measured at different operating temperatures. It was found that the ZnO+2 at.% La film has shown high sensitivity to low concentration of hydrogen peroxide vapors at different operating temperature started from room temperature.

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