INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS

Vartanyan Vartanyan

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Abstract

Electron capture process in GaAs/AlAs spherical quantum dot-quantum well structure is studied theoretically. The capture rate in two polar-optical-phononmediated capture processes has been calculated by taking into account the phonon confinement effect. Carrier capture is shown to proceed with rates as high as 1010 s–1 at temperature T>100 K. A short capture time is also achieved for low carrier density.

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INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS

Abstract

Author(s)

Table of Contents

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INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS

Abstract

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