The dispersion relation of a novel semiconductor-gap-dielectric waveguide in terahertz range are investigated.It is shown that InAs–SiO2–Si structure supports strongly confined guided mode with а sizes ~0.0016 λ × 0.02 λ at 1 THz.
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Material Science (Shared)
, 2025, Issue 1, pp. 1–10
ISSN Online: 0000-0000
DOI:
10.xxxx/example-doi