PLASMONIC MODE CONFINEMENT IN InAs–SiO2–Si WAVEGUIDE IN TERAHERTZ REGION

H.S. Hakobyan

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Abstract

The dispersion relation of a novel semiconductor-gap-dielectric waveguide in terahertz range are investigated.It is shown that InAs–SiO2–Si structure supports strongly confined guided mode with а sizes ~0.0016 λ × 0.02 λ at 1 THz.

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PLASMONIC MODE CONFINEMENT IN InAs–SiO2–Si WAVEGUIDE IN TERAHERTZ REGION

Abstract

Author(s)

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PLASMONIC MODE CONFINEMENT IN InAs–SiO2–Si WAVEGUIDE IN TERAHERTZ REGION

Abstract

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