Armenian Journal of Physics, 2018, vol. 11, issue 2
ISSN 1829-1171
2018; 84–90
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Impedance characteristics of p-Si /BaxSr1-xTiO3 heterojunction prepared by pulsed laser deposition method
Buniatyan Buniatyan*
Received: 2026-07-21 · Published: 2018-07-09
© 2018 The Author(s) and the original publisher.
Licence: as stated by the publisher.
Shared article.
- Original title
- Impedance characteristics of p-Si /BaxSr1-xTiO3 heterojunction prepared by pulsed laser deposition method
- Author
- Buniatyan Buniatyan
- Source journal
- Armenian Journal of Physics, 2018, vol. 11, issue 2
- Published
- 2018-07-09
- Licence
- as stated by the publisher
Abstract
p Si Ba Sr TiO xx heterojunction properties are investigated by electrochemical impedance spectroscopy method for the first time. The general equivalent circuit model is proposed in circuit description code as: Cf , Rf , Ch,Rh,Rp, where Cf , Rf are the Ba Sr TiO xx 13 film conditioned capacitance and resistance, Ch, Rh are the heterojunction depletion layer capacitance and resistance, respectively, Rp is the series resistance. It is stated that the Bode plot curves of the structure in air mostly affected by the depletion layer capacitance of heterojunction () CVh .