Multilayer Anisotropic Thin Film with a Twist
ISSN: 1829-1171
Submitted: 2026-07-17
This work is licensed under Creative Commons Attribution–NonCommercial International License
(CC BY-NC 4.0).
Electron capture process in GaAs/AlAs spherical quantum dot-quantum well structure is studied theoretically. The capture rate in two polar-optical-phononmediated capture processes has been calculated by taking into account the phonon confinement effect. Carrier capture is shown to proceed with rates as high as 1010 s–1 at temperature T>100 K. A short capture time is also achieved for low carrier density.