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Abstract
The CIS thin films were prepared by magnetron sputtering of Cu and In layers on a sodalime glass substrate from high purity elemental targets, that had been followed by the selenization of thus prepared samples placed in graphite container inside the heated vacuum chamber. This procedure was carried out at various temperatures to determine its impact on the particle size, surface roughness, layer thickness, lattice parameters and the ratio of phases present in the compound. Investigations showed the formation of 3 phases: CuInSe2 with (112) and (220) preferred orientations, Cu2Se (Cu1.8Se – Berzelianite) and In2O3 (Indium oxide) without ordered orientations. AFM and XRD analysis were performed. Gaussian and Cauchy (Lorenzian) functions were established as best matched within the created model. It was determined that selenization temperature has a significant influence on the structural and compositional parameters of the CIS thin films. In particular, the crystallite size and the percentage of CuInSe2 phase in the structure increases in case of temperature rise until 450°C.
