Single-Layer Amorphous Carbon Anti-Reflective Coatings Obtained by The Pulsed Laser Deposition Method

Abstract

Single-layer a-C anti-reflective coatings on the Si and GaAs substrates were obtained by using of a Q-switched nanosecond pulsed laser deposition method. It is established that singlelayer a-C coatings effectively reduce the high reflection of substrates (on average to 5 % for Si and 8 % for GaAs in 400-750 nm wave range). Used by us technology for fabrication of a-C antireflective coatings is very simple (excludes high-energy implantation, high-temperature diffusion and deposition processes) and applied for the first time.