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Single-Layer Amorphous Carbon Anti-Reflective Coatings Obtained by The Pulsed Laser Deposition Method

This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Submitted: 2026-07-24
CC BY-NC 4.0 This work is licensed under Creative Commons Attribution–NonCommercial International License (CC BY-NC 4.0).

Abstract

Single-layer a-C anti-reflective coatings on the Si and GaAs substrates were obtained by using of a Q-switched nanosecond pulsed laser deposition method. It is established that singlelayer a-C coatings effectively reduce the high reflection of substrates (on average to 5 % for Si and 8 % for GaAs in 400-750 nm wave range). Used by us technology for fabrication of a-C antireflective coatings is very simple (excludes high-energy implantation, high-temperature diffusion and deposition processes) and applied for the first time.

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